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ZXMN10A25K
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
?
?
?
?
?
?
0.5
± 100
V
μ A
nA
I D = 250μA, V GS = 0V
V DS = 100V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 11)
Forward Transconductance (Notes 11 & 12)
Diode Forward Voltage (Note 11)
Reverse recovery time (Note 12)
Reverse recovery charge (Note 12)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
2.0
?
?
?
?
?
?
7.3
0.85
40.5
62
4.0
125
150
?
0.95
?
?
V
m ?
S
V
ns
nC
I D = 250μA, V DS = V GS
V GS = 10V, I D = 3.2A
V GS = 6V, I D = 2.6A
V DS = 15V, I D = 2.9A
I S = 3.2A, V GS = 0V, T J = +25°C
I S = 2.9A, di/dt = 100A/μs
T J = +25°C
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
859
57.3
33
9.6
17.16
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = 50V, V GS = 0V
f = 1MHz
V GS = 5V
V DS = 50V
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Q gs
Q gd
t D(on)
?
?
?
3.77
5.36
4.9
?
?
?
nC
nC
ns
V GS = 10V
I D = 2.9A
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
t r
t D(off)
t f
?
?
?
3.7
17.7
9.4
?
?
?
ns
ns
ns
V DD = 50V, V GS = 10V
I D = 1A, R G ? 6.0 Ω
Notes:
11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
4 of 8
www.diodes.com
July 2012
? Diodes Incorporated
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